Quantum Efficiency Enhancement versus Reduced Power Conversion Efficiency in Graphene/MoS₂/n-Si Cells
DOI:
https://doi.org/10.14500/aro.12328Keywords:
2D materials, Graphene, Heterostructure solar cell, Monolayer MoS2, N-type siliconAbstract
In this study, we examined the performance of a vertically stacked solar cell made of graphene, monolayer MoS₂, and n-type silicon, which combines the exceptional transparency and high carrier mobility of graphene with the light absorption capabilities of MoS2 and the proven photovoltaic response of silicon. The solar cell recorded the maximum external quantum efficiency (EQE) of 60% at ~660 nm, significantly higher than the previously recorded 44% EQE for the Mo2 /n-Si junction alone. Despite this improvement in the EQE, the power conversion efficiency fell from 2.46% to 1.6% after graphene integration, owing to higher interfacial recombination and series resistance. These results clarify the potential and inherent trade-offs of implementing 2D/2D/3D hybrid structures for efficient sunlight harvesting, paving the way for interface design solutions to fully exploit their capabilities.
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Accepted 2026-07-29
Published 2026-09-19
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