On Some Ve-Degree and Harmonic Molecular Topological Properties of Carborundum
Abstract
Carborundum, also known as silicon carbide which containing carbon and silicon, is a semiconductor. Molecular topological properties of physical substances are important tools to investigate the underlying topology of these substances. Ev-degree and ve-degree based on the molecular topological indices have been defined as parallel to their corresponding classical degree based topological indices in chemical graph theory. Classical degree based topological properties of carborundum have been investigated recently. As a continuation of these studies, in this study, we compute novel ve-degree harmonic, ve-degree sum-connectivity, ve-degree geometric-arithmetic, and ve-degree atom-bond connectivity, the first and the fifth harmonic molecular topological indices of two carborundum structures.
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Anjum, M.S. and Safdar, M.U., 2019. K Banhatti and K hyper-Banhatti indices of nanotubes. Engineering and Applied Science Letters, 2(1), pp.19-37.
Chellali, M., Haynes, T.W., Hedetniemi, S.T. and Lewis, T.M., 2017. On vedegrees and ev-degrees in graphs. Discrete Mathematics, 340(2), pp.31-38.
Ediz, S., 2010. Computing ediz eccentric connectivity index of an infinite class of nanostar dendrimers. Optoelectronics and Advanced Materials: Rapid Communications, 4, pp.1847-1848.
Ediz, S., 2011. On the ediz eccentric connectivity index of a graph. Optoelectronics and Advanced Materials: Rapid Communications, 5(11), pp.1263-1264.
Ediz, S., 2013. The ediz eccentric connectivity ındex of one pentagonal carbon nanocones. Fullerenes, Nanotubes and Carbon Nanostructures, 21(2), pp. 113-116.
Ediz, S., 2017. A new tool for QSPR researches: Ev-degree randić index. Celal Bayar Journal of Science, 13(3), pp.615-618.
Ediz, S., 2017. Predicting some physicochemical properties of octane isomers: A topological approach using ev-degree and ve-degree zagreb indices. International Journal of Systems Science and Applied Mathematics, 2(5), pp.87-92.
Ediz, S., 2018. On ve-degree molecular topological properties of silicate and oxygen networks. International Journal of Computing Science and Mathematics, 9(1), pp.1-12.
Ediz, S., Farahani, M.R. and Imran, M., 2017. On novel harmonic indices of certain nanotubes. International Journal of Advanced Biotechnology and Research, 8(4), pp.87-92.
Gao, W., Asif, M. and Nazeer, W., 2018. The study of honey comb derived network via topological indices. The Open Journal of Mathematical Analysis, 2(2), pp.10-26.
Imran, M., Siddiqui, M., Naeem, M. and Iqbal, M., 2018. On topological properties of symmetric chemical structures. Symmetry, 10(5), pp.173-182.
Jiang, J.W., Wang, B.S. and Park, H.S., 2018. Topologically protected interface phonons in two-dimensional nanomaterials: Hexagonal boron nitride and silicon carbide. Nanoscale, 10(29), pp.13913-13923.
Kaźmierczak-Bałata, A. and Mazur, J., 2018. Effect of carbon nanoparticle reinforcement on mechanical and thermal properties of silicon carbide ceramics. Ceramics International, 44(9), pp.10273-10280.
Kwun, Y., Virk, A., Nazeer, W., Rehman, M. and Kang, S., 2018. On the multiplicative degree-based topological indices of silicon-carbon Si2C3-I [p, q] and Si2C3-II [p, q]. Symmetry, 10(8), pp.320-336.
Mei, H., Huang, W., Hua, C., Xu, Y. and Cheng, L., 2018. Manufacturing isotropic carbon fibre preforms for multilayered silicon carbide composites with a pyrolytic carbon interphase. Journal of Manufacturing Processes, 34, pp.62-69.
Munir, M., Nazeer, W., Nizami, A.R., Rafique, S. and Kang, S.M., 2016. M-polynomials and topological indices of titania nanotubes. Symmetry, 8(11), pp.117-125.
Munir, M., Nazeer, W., Rafique, S. and Kang, S.M., 2016. M-polynomial and degree-based topological indices of polyhex nanotubes. Symmetry, 8(12), pp.149-156.
Munir, M., Nazeer, W., Rafique, S. and Kang, S.M., 2016. M-polynomial and related topological indices of Nanostar dendrimers. Symmetry, 8(9), pp.97-108.
Reddy, P.S., Kesavan, R. and Ramnath, B.V., 2018. Investigation of mechanical properties of aluminium 6061-silicon carbide, boron carbide metal matrix composite. Silicon, 10(2), pp.495-502.
Sahin, B. and Ediz, S., 2018. On ev-degree and ve-degree topological indices. Iranian Journal of Mathematical Chemistry, 9(4), pp.263-277.
Seal, S., Glover, M.D. and Mantooth, H.A., 2017. 3-d wire bondless switching cell using flip-chip-bonded silicon carbide power devices. IEEE Transactions on Power Electronics, 33(10), pp.8553-8564.
Shao, Z., Virk, A.R., Javed, M.S., Rehman, M.A. and Farahani, M.R., 2019. Degree based graph invariants for the molecular graph of Bismuth Tri-Iodide. Engineering and Applied Science Letters, 2(1), pp.1-11.
Snead, L.L., Katoh, Y., Koyanagi, T. and Terrani, K., 2019. Stored energy release in neutron irradiated silicon carbide. Journal of Nuclear Materials, 514, pp.181-188.
Taguchi, T., Yamamoto, S. and Ohba, H., 2018. Ion irradiation-induced novel microstructural change in silicon carbide nanotubes. Acta Materialia, 154, pp.90-99.
Van der Broeck, C.H., Ruppert, L.A., Lorenz, R.D. and De Doncker, R.W., 2018. Methodology for active thermal cycle reduction of power electronic modules. IEEE Transactions on Power Electronics, 34(8), pp.8213-8229.
Virk, A.R., Jhangeer, M.N., Rehman, M.A., 2018. Reverse zagreb and reverse hyper-zagreb ındices for silicon carbide Si2c3-I[r,s] and Si2C3-II [r,s]. Engineering and Applied Science Letters, 1(2), pp.37-50.
Wing, B.L. and Halloran, J.W., 2018. Relaxation of residual microstress in reaction bonded silicon carbide. Ceramics International, 44(10), pp.11745-11750.
Zhong, L., 2012. The harmonic index for graphs. Applied Mathematics Letters, 25, pp.561-566.
Copyright (c) 2020 Murat Cancan, Kerem Yamaç, Ziyattin Taş, Mehmet Şerif Aldemir
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