A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

Keywords: AlGaAs/GaAs, Current-voltage, Distributed Bragg reflectors, Mobility


This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavity surface emitting lasers (VCSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs). Electrical characterizations and Hall measurements of current−voltage (IV) for GaAs/Al0.9Ga0.1As linear DBRs and GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As graded DBRs were also performed at temperatures between 13 and 300 K. Consequently, p-type DBRs are designed with graded composition interfaces technique. The smaller mesa diameters are used to reduce vertical and longitudinal resistances and to limit the heating effect and improve the characteristics of VCSEL/VCSOA devices.


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Author Biography

Faten A. Chaqmaqchee, Department of Physics, Faculty of Science and Health, Koya Univ ersity, Koya KOY45, Kurdistan Region - F.R. Iraq

Faten A. Chaqmaqchee got a B.Sc. Degree In Physics from the University Salahaddin In 1994-1995, M.Sc. Degree in Laser Physics from the University Selcuk In 2000, Ph.D. Degree In Applied Physics of Laser Physics from the University of Essex In 2012, and Post Doctoral from Technical University Berlin TUB in 2018. She has Participated in more than Ten Conferences, Workshops and Training Schools in the United Kingdom, United States America and all around Europe. She is now an Assistant Professor of Applied Physics (Laser Physics), where she attended the Work at the University of Koya Since 2004, But She was an Assistance Physics at the University of Salahhadin in Erbil Between 1995 and 1998.  


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How to Cite
Chaqmaqchee, F. A. (2021) “A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers”, ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9(1), pp. 89-94. doi: 10.14500/aro.10741.