Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers

Keywords: Vertical-cavity surface emitting laser, AlGaAs Distributed Bragg reflectors, InGaAs/GaAsP quantum wells, Static characterization


Geometrical contacts of a double mesa structure with 16 rows ×15 columns arrays of top emitting GaAs based 980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated and characterized. In this paper, 5 strained In0.22Ga0.78As/Ga0.9AsP0.1 quantum wells (QWs) within λ/2 thick cavity have been employed. The top and the bottom epitaxially grown mirrors are based on the linear graded Al0.9Ga0.1As/GaAs distributed Bragg reflectors (DBRs) with 20.5 and 37 periods, respectively. Static parameters including threshold currents, rollover currents, maximum optical output power and wall-plug efficiency are extracted from light out power-current-voltage (LIV) of VCSELs with fixed oxide aperture diameter of ∅~ 6 μm and various mesa2 diameters. In addition, spectral emission for 980 nm VCSELs of oxide aperture between ∅~ 6 and 19 μm and with fixed ∅~ 6 μm and different bias currents are analyzed. The highest optical output power of around 33 dBm is observed at bias current of 0.8 mA for short−reach optical interconnect applications.


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Author Biography

Faten A. Chaqmaqchee, Department of Physics, Faculty of Science and Health, Koya University, Koya KOY45, Kurdistan Region - F.R. Iraq

Faten A. Chaqmaqchee is an Assistant Prof. at the Department of Physics, Faculty of Science and Health, Koya University. She got the B.Sc. degree from Salahaddin University, the M.Sc. degree fromSecuk University and the Ph.D. degree fromUniversityof Essex. Her research interests are in Optoelectronic devics, Semiconductor matarials and Laser Physics.


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How to Cite
Chaqmaqchee, F. A. (2021) “Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers”, ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9(2), pp. 112-116. doi: 10.14500/aro.10845.