A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

Keywords: AlGaAs/GaAs, Current-voltage, Distributed Bragg reflectors, Mobility

Abstract

This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavity surface emitting lasers (VCSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs). Electrical characterizations and Hall measurements of current−voltage (IV) for GaAs/Al0.9Ga0.1As linear DBRs and GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As graded DBRs were also performed at temperatures between 13 and 300 K. Consequently, p-type DBRs are designed with graded composition interfaces technique. The smaller mesa diameters are used to reduce vertical and longitudinal resistances and to limit the heating effect and improve the characteristics of VCSEL/VCSOA devices.

Downloads

Download data is not yet available.

Author Biography

Faten A. Chaqmaqchee, Department of Physics, Faculty of Science and Health, Koya Univ ersity, Koya KOY45, Kurdistan Region - F.R. Iraq

Faten A. Chaqmaqchee got a B.Sc. Degree In Physics from the University Salahaddin In 1994-1995, M.Sc. Degree in Laser Physics from the University Selcuk In 2000, Ph.D. Degree In Applied Physics of Laser Physics from the University of Essex In 2012, and Post Doctoral from Technical University Berlin TUB in 2018. She has Participated in more than Ten Conferences, Workshops and Training Schools in the United Kingdom, United States America and all around Europe. She is now an Assistant Professor of Applied Physics (Laser Physics), where she attended the Work at the University of Koya Since 2004, But She was an Assistance Physics at the University of Salahhadin in Erbil Between 1995 and 1998.  

References

Chaqmaqchee, F., Abubekr Salh, S. and Sabri, M.M., 2020. Optical analysis of 1300 nm GaInNAsSb/GaAs vertical cavity semiconductor optical amplifier, Zanco Journal of Pure and Applied Sciences, 32(2), pp.87-92.

Chaqmaqchee, F.A.I. and Lott, J.A., 2020. Impact of oxide aperture diameter on optical output power, spectral emission, and bandwidth for 980 nm VCSELs. OSA Continuum, 3(9), pp.2602-2613.

Chaqmaqchee, F.A.I., 2019. Performance characteristics of conventional vertical cavity surface emitting lasers VCSELs at 1300 nm. ZANCO Journal of Pure and Applied Sciences, 31(2), pp.14-18.

Chaqmaqchee, F.A.I., Mazzucato, S., Sun, Y., Balkan, N., Tiras, E., Hugues, M. and Hopkinson, M., 2012. Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 mu operation. Materials Science and Engineering B, 177(10), pp.739-743.

Croquette, K.D. and Hou, H.Q., 1997. Vertical-cavity surface emitting lasers: Moving from research to manufacturing, Proceedings of the IEEE, 85(11), pp.1730-1739.

Garmire, E., 2003. Theory of quarter-wave-stack dielectric mirrors used in a thin Fabry-Perot filter. Applied Optics, 42, pp.5442-5449.

Macleod, H.A., 2018. Thin-film Optical Filters, CRC Press, Taylor and Francis, Arizona, USA.

Marciniak, M., Gebski, M., Broda, A., Muszalski, J., Czyszanowski, T. and Lott, J.A., 2020. Impact of Top Mirror Power Reflectance on 980-nm VCSEL Performance. Vol. 11300. Proceedings SPIE. Nabiev, R.F. and Chang-Hasnain, C.J., 1995. Voltage drop in n- and p-type Bragg reflectors for vertical-cavity surface-emitting lasers. IEEE Photonics Technology Letters, 7(7), pp.733-735.

Ogura, M., Hata, T., Kawai, N.J. and Yao, T., 1983. GaAs/AlxGa1–xAs multilayer reflector for surface emitting laser diode. Japanese Journal of Applied Physics, 22(2A), pp.L112-L114.

Pickrella, G.W., Louderbacka, D.A., Fisha, M.A., Hindia, J.J., Lina, H.C., Simpsona, M.C., Guilfoylea, P.S. and Lear, K.L., 2005. Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surfaceemitting lasers. Journal of Crystal Growth, 280(1-2), pp.54-59.

Pohl, J., Cole, G.D., Zeimer, U., Aspelmeyer, M. and Weyers, M., 2018. Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors. Optics Letters, 43(15), pp.3522-3525.

Wang, G., Li, K., Chen, S. and Yang, H., 2019. Analysis of pulse amplification characteristics in vertical cavity semiconductor optical amplifiers. Journal Integrated Ferroelectrics, 198(1), pp.39-54.

Winston, D.W. and Hayes, R.E., 1998. Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics, IEEE Journal of Electronics, 34(4), pp.711.

Zhang, C., ElAfandy, R. and Han, J., 2019. Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers, Applied Sciences, 9(8), pp.1-20.

Published
2021-06-03
How to Cite
Chaqmaqchee, F. A. (2021) “A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers”, ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9(1), pp. 89-94. doi: 10.14500/aro.10741.
Section
Articles