Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

Faten A. Chaqmaqchee

doi:10.14500/aro.10076

Faten A. Chaqmaqchee Department of Physics, Faculty of Science and Health, Koya University, University Park, Danielle Mitterrand Boulevard, Koya KOY45, Kurdistan Region.

Keywords: Amplifier, Al(Ga)As, gain, GaInNAs, VCSOA.

Abstract

III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs), where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs) enclosed between top and bottom of Aluminum (Gallium) Arsenic Al(Ga)As distributed bragg mirrors (DBRs) using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs) structures are based on Fabry Perot (FP) method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

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Author Biography

Faten A. Chaqmaqchee, Department of Physics, Faculty of Science and Health, Koya University, University Park, Danielle Mitterrand Boulevard, Koya KOY45, Kurdistan Region.

Faten A. Chaqmaqchee is a lecturer at the department of Physics, Koya University since 2004. She has a B.Sc. in Physics from Salahaddin University in Kurdistan Region, Iraq and M.Sc. in Laser Physics from Selçuk Üniversitesi in Turkey. She also has a Ph.D. in Applied Physics of optoelectronic devices from University of Essex, UK. Dr. Faten has experience in designing, fabrications and characterization of HELLISH, VCSELs and VCSOAs devices that used for communication system. She has participated in many conferences, workshops and training Schools in the United Kingdom and all around Europe. She was a member of European cooperation in science and technology COST Action MP0805. She published Journal Articles and conference papers, and she is also a reviewer member in a national and an international journals.

References

Adams, M.J., Collins, J.V. and Henning, I.D., 1985. Analysis of semiconductor laser optical amplifiers. IEE Proc. J., 132(1), pp.58-63.

Aissat, A., Nacer, S., El-Bey, M., Guessoum, A., Ferdjani, K., Berkani, D. and Vilcot, J.P., 2007. The effect of nitrogen on the energy gap of a structure with strained quantum well containing GaInNAs/GaAs. Iranian J. of Elect. and Comp. Eng., 6(2), pp.169-161.

Buyanova, I.A., Chen, W.M. and Monemar, B., 2001. Electronic properties of Ga(In)NAs alloys. MRS Internet J. Nitride Semicond. Res., 6(2), pp.2.

Björlin, E.S., Kimura, T. and Bowers, J.E., 2003. Carrier-confined vertical cavity semiconductor optical amplifiers for higher gain and efficiency. IEEE J. Select. Topics Quant. Elect., 9(5), pp.1374-1385.

Coldren, L.A, Corzine, S.W. 1995. Diode lasers and photonic integrated circuits, NY: Wiley, New York.

Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S. and Yazawa, Y., 1996. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance. Jpn. J. Appl. Phys., 35(1), pp.1273-1275.

Laurand, N., Calvez, S., Dawson, M.D., Bryce, A.C., Jouhti, T., Konttinen, J. and Pessa, M., 2005. Performance comparison of GaInNAs vertical cavity semiconductor optical amplifiers. IEEE J. Quant. Elect., 41(5), pp.642-649.

Lindsay, A. and O’Reilly, E.P., 1999. Theory of enhanced bandgap non parabolicity in GaNx As1-x and related alloys. Solid State Communication. 112(8), pp.443-447.

Piprek, J., Björlin, E.S. and Bowers, J.E., 2001. Design and analysis of vertical-cavity semiconductor optical amplifiers. IEEE J. Quant. Elect., 37(1), pp.127-134.

Piprek, J., Bjorlin, E.S. and Bowers, J.E., 2001. Optical gain-bandwidth product of vertical cavity laser amplifiers. Elect. Letts., 37(5), pp.298-299.

Shan, W., Walukiewiez, W., Ager, J.W., Haller, E.E., Geisz, J.F., Friedman, D.J., Olson J.M. and Kurtz, S.R., 1999. Band anticrossing in GaInNAs alloys. Phys. Rev. Lett., 82(6), pp.1221.

Skierbiszewski, C., Perlin, P., Wišniewski, P., Knap, W., Suski, T., Walukiewicz, W., Shan, W., Yu, K.M., Ager, J.W., Haller, E.E., Geisz, J.F. and Olson, J.M., 2000. Large, nitrogen-induced increase of the electron effective mass in InyGa1 - yNxAs1 – x . Appl. Phys. Lett. 76(17), pp.2409-2411.

Sun, Y., Balkan, N., Erol, A. and Arikan, M.C., 2009. Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. Microelect. J., 40(30), pp.403-405.