Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers

DOI: https://doi.org/10.14500/aro.10845
Keywords: Vertical-cavity surface emitting laser, AlGaAs Distributed Bragg reflectors, InGaAs/GaAsP quantum wells, Static characterization

Abstract

Geometrical contacts of a double mesa structure with 16 rows ×15 columns arrays of top emitting GaAs based 980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated and characterized. In this paper, 5 strained In0.22Ga0.78As/Ga0.9AsP0.1 quantum wells (QWs) within λ/2 thick cavity have been employed. The top and the bottom epitaxially grown mirrors are based on the linear graded Al0.9Ga0.1As/GaAs distributed Bragg reflectors (DBRs) with 20.5 and 37 periods, respectively. Static parameters including threshold currents, rollover currents, maximum optical output power and wall-plug efficiency are extracted from light out power-current-voltage (LIV) of VCSELs with fixed oxide aperture diameter of ∅~ 6 μm and various mesa2 diameters. In addition, spectral emission for 980 nm VCSELs of oxide aperture between ∅~ 6 and 19 μm and with fixed ∅~ 6 μm and different bias currents are analyzed. The highest optical output power of around 33 dBm is observed at bias current of 0.8 mA for short−reach optical interconnect applications.

Downloads

Download data is not yet available.

Author Biography

Faten A. Chaqmaqchee, Department of Physics, Faculty of Science and Health, Koya University, Koya KOY45, Kurdistan Region - F.R. Iraq

Faten A. Chaqmaqchee is an Assistant Prof. at the Department of Physics, Faculty of Science and Health, Koya University. She got the B.Sc. degree from Salahaddin University, the M.Sc. degree fromSecuk University and the Ph.D. degree fromUniversityof Essex. Her research interests are in Optoelectronic devics, Semiconductor matarials and Laser Physics.

References

Blokhin, S., Lott, J.A., Mutig, A., Fiol, G., Lederntsov, N.N., Maximov, M.V., Nadtochiy, A.M., Shchukin, V.A. and Bimberg, D., 2009. Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s. Electronics Letters, 45(10), pp.501-503.

Castro, J.M., Pimpinella, R., Kose, B., Huang, Y., Lane, B., Szczerba, K., Westbergh, P., Lengyel, T., Gustavsson, J.S., Larsson, A. and Andrekson, P.A., 2015. 48.7-Gb/s 4-PAM transmission over 200 m of high bandwidth MMF using an 850-nm VCSEL. IEEE Photonics Technology Letters, 27(17), pp.1799-1801.

Chaqmaqchee, F.A., 2020. Long-wavelength GaInNAs/GaAs vertical-cavity surface-emitting laser for communication applications. Aro-the Scientific Journal of Koya University, 8(1), pp.107-111.

Chaqmaqchee, F.A., 2021. A comparative study of electrical characterization of p-doped distributed Bragg reflectors mirrors for 1300 nm vertical cavity semiconductor optical amplifiers, Aro-The Scientific Journal of Koya University, 9(1), pp.89-94.

Chaqmaqchee, F.A.I. and Lott, J.A., 2020. Impact of oxide aperture diameter on optical output power, spectral emission, and bandwidth for 980 nm VCSELs. OSA Continuum, 3(9), pp.2602-2613.

Chaqmaqchee, F.A.I., 2020. Gain analysis of vertical-cavity surface-emitting laser for long optical fiber communication. Journal of Optoelectronics and Advanced Materials, 22(7-8), pp.339-343.

Choquette, K., Schneider, R.P., Lear, K.L. and Geib, K.M., 1994. Low threshold voltage vertical-cavity lasers fabricated by selective oxidation. Electronics Letters, 30(24), pp.2043-2044.

Choquette, K.D., Chow, W.W., Hadley, G.R., Hou, H.Q. and Geib, K.M., 1997. Scalability of small-aperture selectively oxidized vertical cavity lasers. Applied Physics Letters, 70(7), pp.823-825.

DeCusatis, C., 2013. Optical interconnect networks for data communications. Journal of Lightwave Technology, 32(4), pp.544-552.

Haghighi, N. and Lott, J.A., 2021. Electrically parallel three-element 980 nm VCSEL arrays with ternary and binary bottom DBR mirror layers. Materials, 14(2), pp.1-17.

Haghighi, N., Moser, P. and Lott, J.A., 2020. 40 Gbps with electrically parallel triple and septuple 980 nm VCSEL arrays. Journal of Lightwave Technology, 38(13), pp.3387-3394.

Haghighi, N., Moser, P., Zorn, M. and Lott, J.A., 2020. 19-element vertical cavity surface emitting laser arrays with inter-vertical cavity surface emitting laser ridge

connectors. Journal of Physics: Photonics, 2(4), pp.04LT01.

Healy, S.B., O’Reilly, E.P., Gustavsson, J.S., Westbergh, P., Haglund, A., Larsson, A. and Joel, A., 2010. Active region design for high-speed 850-nm VCSELs. IEEE Journal of Quantum Electronics, 46(4), pp.506-512.

Hofmann, W., 2010. High-speed buried tunnel junction vertical-cavity surfaceemitting lasers. IEEE Photonics Journal, 2(5), pp.802-815.

Iga, K., 2000. Surface-emitting laser-its birth and generation of new optoelectronics filed. IEEE Journal of Selected Topics in Quantum Electronics, 6(6), pp.1201-1215.

Lau, K. and Yariv, A., 1985. Ultra-high speed semiconductor lasers. IEEE Journal of Quantum Electronics, 21(2), pp.121-138.

Moser, P., Lott, J.A., Wolf, P., Larisch, G., Li, H. and Bimberg, D., 2014. Errorfree 46 Gbit/s operation of oxide-confined 980 nm VCSELs at 85 C. Electronics Letters, 50(19), pp.1369-1371.

Mutig, A. and Bimberg, D., 2011. Progress on high-speed 980nm VCSELs for short-reach optical interconnects. Advances in Optical Technologies, 2011, pp.1-15.

Nagarajan, R., Ishikawa, M., Fukushima, T., Geels, R.S. and Bowers, J.E., 1992. High speed quantum-well lasers and carrier transport effects. IEEE Journal of Quantum Electronics, 28(10), pp.1990-2008.

Ou, Y., Gustavsson, J.S., Westbergh, P., Haglund, A., Larsson, A. and Joel, A., 2009. Impedance characteristics and parasitic speed limitations of high-speed 850-nm VCSELs. IEEE Photonics Technology Letters, 21(24), pp.1840-1842.

Satuby, Y. and Orenstein, M., 1999. Mode-coupling effects on the small signal modulation of multi transverse-mode vertical-cavity semiconductor lasers. IEEE Journal of Quantum Electronics, 35(6), pp.944-954.

Taubenblatt, M.A., 2011. Optical interconnects for high-performance computing. Journal of Lightwave Technology, 30(4), pp.448-457.

Westbergh, P., Safaisini, R., Haglund, E, Kögel, B. Gustavsson, J.S., Larsson, A., Geen, M., Lawrence, R. and Joel, A., 2012. High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s. Electronics Letters, 48(18), pp.1145-1147.

ARO Journal: Volume 9, No. 2 (2021)
Published
2021-12-26
How to Cite
Chaqmaqchee, F. A. (2021) “Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers”, ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9(2), pp. 112-116. doi: 10.14500/aro.10845.
Issue
Vol. 9 No. 2 (2021): Issue Seventeen
Section
Articles

Copyright (c) 2021 Faten A. Chaqmaqchee

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

Authors who choose to publish their work with Aro agree to the following terms:

  • Authors retain the copyright to their work and grant the journal the right of first publication. The work is simultaneously licensed under a Creative Commons Attribution License [CC BY-NC-SA 4.0]. This license allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

  • Authors have the freedom to enter into separate agreements for the non-exclusive distribution of the journal's published version of the work. This includes options such as posting it to an institutional repository or publishing it in a book, as long as proper acknowledgement is given to its initial publication in this journal.

  • Authors are encouraged to share and post their work online, including in institutional repositories or on their personal websites, both prior to and during the submission process. This practice can lead to productive exchanges and increase the visibility and citation of the published work.

By agreeing to these terms, authors acknowledge the importance of open access and the benefits it brings to the scholarly community.

Crossref
Scopus
Google Scholar
Europe PMC

Most read articles by the same author(s)